Title :
Microwave noise in InP and SiGe HBTs: Modeling and challenges
Author :
Sakalas, Paulius ; Schroter, Michael
Author_Institution :
Dept. of Electron Device & Integrated Circuits, Tech. Univ. Dresden, Dresden, Germany
Abstract :
DC, RF and noise characteristics of advanced InP/InGaAs DHBTs and Si/SiGe HBTs were measured and modeled in a broad frequency and temperature range. A systematic model for correlated noise in bipolar transistors and its implementation in HICUM/LO v.1.31 and L2 v.2.31 is presented. The models were verified on SiGe HBTs up to 500 GHz with device simulation results from hydrodynamic and Boltzmann transport equation. HICUM with its implemented noise model also shows very good agreement with measured data in a broad frequency range. The verified model was used for noise analysis of advanced InP/InGaAs DHBTs and Si/SiGe HBTs. It was shown that shot noise correlation for high/speed InP/InGaAs DHBTs is not significant. Compared to Si/SiGe HBTs a higher noise at lower microwave frequencies was observed in InP/InGaAs DHBTs due to their high base recombination current. Nevertheless InP DHBTs show a good noise performance beyond 100 GHz and, due to better fT BVCEO, can compete with advanced Si/SiGe HBTs for LNA design.
Keywords :
Boltzmann equation; Ge-Si alloys; III-V semiconductors; elemental semiconductors; gallium arsenide; heterojunction bipolar transistors; hydrodynamics; indium compounds; microwave bipolar transistors; semiconductor device measurement; semiconductor device models; semiconductor device noise; shot noise; silicon; Boltzmann transport equation; DC characteristics; HICUM-L0 v.1.31; HICUM-L2 v.2.31; InP-InGaAs; LNA; RF characteristics; Si-SiGe; bipolar transistor; device simulation; high base recombination current; high-speed DHBT; hydrodynamic; microwave noise analysis; noise characteristics; shot noise correlation; Double heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Noise; Noise measurement; Silicon; Silicon germanium; Compact model; HICUM; InP/InGaAs DHBT; Noise parameters; Si/SiGe HBT; fT fmax;
Conference_Titel :
Noise and Fluctuations (ICNF), 2013 22nd International Conference on
Conference_Location :
Montpellier
Print_ISBN :
978-1-4799-0668-0
DOI :
10.1109/ICNF.2013.6578897
