DocumentCode
2884017
Title
Study on the characteristics for deep-sub-micron grooved-gate PMOSFET
Author
Ren, Hongxia ; Yue, Hao
Author_Institution
Inst. of Microelectron., Xidian Univ., Xi´´an, China
fYear
2000
fDate
2000
Firstpage
138
Lastpage
141
Abstract
Based on the hydrodynamic energy transport model, using the 2-dimensional device simulator MEDICI, the port electrical characteristics for grooved-gate PMOSFETs are studied at first, and compared with that of counterpart conventional planar PMOSFETs. Then the characteristics are explained in terms of interior physical parameters distribution
Keywords
MOSFET; hot carriers; semiconductor device models; surface potential; 2D device simulator; MEDICI; deep-sub-micron grooved-gate PMOSFET; hot carriers; hydrodynamic energy transport model; surface potential; Degradation; Doping; Electric variables; Hot carriers; Hydrodynamics; MOSFET circuits; Medical simulation; Microelectronics; Poisson equations; Silicon devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2000. Proceedings. 2000 IEEE Hong Kong
Conference_Location
Hong Kong
Print_ISBN
0-7803-6304-3
Type
conf
DOI
10.1109/HKEDM.2000.904234
Filename
904234
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