MOS characteristics of ultra thin rapid thermal CVD ZrO/sub 2/ and Zr silicate gate dielectrics

Author

Lee, C.H. ; Luan, H.F. ; Bai, W.P. ; Lee, S.J. ; Jeon, T.S. ; Senzaki, Y. ; Roberts, D. ; Kwong, D.L.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

fYear

2000

fDate

10-13 Dec. 2000

Firstpage

27

Lastpage

30

Abstract

In this paper, we report MOS characteristics of ultra thin, high quality CVD ZrO/sub 2/ and Zr silicate (Zr/sub 27/Si/sub 10/O/sub 63/) gate dielectrics deposited on Si substrates by in-situ rapid thermal processing. These high-K gate dielectrics show excellent equivalent oxide thickness (EOT) of 8.9 /spl Aring/ (ZrO/sub 2/) and 9.6 /spl Aring/ (Zr/sub 27/Si/sub 10/O/sub 63/) with extremely low leakage current of 20 mA/cm/sup 2/ and 23 mA/cm/sup 2/ @Vg=-1 V, respectively. The thermal stability of ZrO/sub 2//Si as well as the poly-Si/ZrO/sub 2/ interfaces are examined using in-situ XPS. We also investigate the conduction mechanisms and long-term reliability in these gate stacks. In addition, the effects of various gate electrode materials (Al/TiN, poly-SiGe, and poly-Si) on the electrical properties of gate stacks are studied. Finally, we also study the boron diffusion behaviors in p/sup +/-poly-Si PMOS.

Keywords

CMOS integrated circuits; CVD coatings; MOS capacitors; X-ray photoelectron spectra; dielectric thin films; leakage currents; rapid thermal processing; thermal stability; zirconium compounds; 1 V; CVD; MOS characteristics; Zr/sub 27/Si/sub 10/O/sub 63/; ZrO/sub 2/; conduction mechanisms; diffusion behaviors; gate electrode materials; gate stacks; high-K gate dielectrics; in-situ XPS; in-situ rapid thermal processing; leakage current; long-term reliability; thermal stability; Annealing; Boron; Dielectric substrates; Electrodes; Implants; Leakage current; Nitrogen; Rapid thermal processing; Tin; Zirconium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904251

Filename

904251