An accurate, experimentally verified electron minority carrier mobility model for Si and SiGe

Author

Jungemann, Christoph ; Heinemann, B. ; Tittelbach-Helmrich, K. ; Meinerzhagen, B.

Author_Institution

Inst. fur Theor. Elektrotech. und Mikroelektron., Bremen Univ., Germany

fYear

2000

fDate

10-13 Dec. 2000

Firstpage

101

Lastpage

104

Abstract

The electron minority mobility in Si and SiGe is extracted from high-field magnetoconductance experiments on SiGe heterojunction bipolar transistors based on a new electron transport model. The transport model is verified by comparison with magnetoresistance experiments for lightly doped Si. After calibrating an empirical parameter of the impurity scattering model against data for highly doped Si, good results are obtained for SiGe without any further fitting.

Keywords

Ge-Si alloys; electron mobility; elemental semiconductors; heterojunction bipolar transistors; impurity scattering; magnetoresistance; minority carriers; semiconductor device models; semiconductor materials; silicon; Si; SiGe; SiGe heterojunction bipolar transistor; electron minority carrier mobility; electron transport model; highly doped Si; impurity scattering; lightly doped Si; magnetoconductance; Doping; Electron mobility; Germanium silicon alloys; Impurities; Light scattering; Magnetic anisotropy; Magnetic fields; Perpendicular magnetic anisotropy; Semiconductor process modeling; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904268

Filename

904268