Title :
InP HEMT amplifier development for G-band (140-220 GHz) applications
Author :
Lai, R. ; Barsky, M. ; Grundbacher, R. ; Liu, P.H. ; Chin, T.P. ; Nishimoto, M. ; Elmajarian, R. ; Rodriguez, R. ; Tran, L. ; Gutierrez, A. ; Oki, A. ; Streit, D.
Author_Institution :
Semicond. Products Centre, TRW Inc., Redondo Beach, CA, USA
Abstract :
In this paper we describe a unique InP HEMT MMIC process that has been developed for the demonstration of the first ever G-band (140-220 GHz) amplifiers. This process combines enhanced InP HEMT profiles with a 70 nm T-gate process and a dry via etch process to achieve a high maximum gain of greater than 8 dB at 200 GHz and the highest gain amplifiers ever demonstrated (15 dB at 215 GHz).
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; field effect MIMIC; indium compounds; millimetre wave amplifiers; sputter etching; 140 to 220 GHz; 70 nm; 8 to 15 dB; G-band; HEMT amplifier; InP; MMIC process; T-gate process; dry via etch process; Circuits; Cutoff frequency; Dry etching; Grounding; HEMTs; Indium gallium arsenide; Indium phosphide; MMICs; Semiconductor optical amplifiers; Transconductance;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904286
