A new poly-Si TFT with selectively doped channel fabricated by novel excimer laser annealing

Author

Jae-Hong Jeon ; Min-Cheol Lee ; Kee-Chan Park ; Sang-Hoon Jung ; Min-Koo Han

Author_Institution

Sch. of Electr. Eng., Seoul Nat. Univ., South Korea

fYear

2000

fDate

10-13 Dec. 2000

Firstpage

213

Lastpage

216

Abstract

A new excimer laser annealing method, which results in a single grain boundary in the channel of polycrystalline silicon thin film transistor (poly-Si TFT), is proposed. The proposed method employs lateral grain growth through aluminum patterns on an amorphous silicon layer. The aluminum pattern acts as a selective beam mask and a lateral heat sink during the laser irradiation. Poly-Si TFTs fabricated by the proposed ELA method exhibit considerably improved characteristics, such as the high field effect mobility exceeding 240 cm/sup 2//V sec. The turn-off characteristics have also been improved by the field-reducing structure.

Keywords

amorphous semiconductors; elemental semiconductors; excimer lasers; grain boundaries; laser beam annealing; recrystallisation annealing; semiconductor growth; silicon; thin film transistors; Si; Si amorphous layer; aluminum patterns; excimer laser annealing; field-reducing structure; high field effect mobility; improved characteristics; laser irradiation; lateral heat sink; poly-Si TFT; selective beam mask; selectively doped channel; single grain boundary; turn-off characteristics; Aluminum; Annealing; Grain boundaries; Heat sinks; Laser beams; Leakage current; Optical pulses; Pulsed laser deposition; Silicon; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904295

Filename

904295