DocumentCode
2885162
Title
V/sub th/ fluctuation induced by statistical variation of pocket dopant profile
Author
Tanaka, T. ; Usuki, Tatsuya ; Futatsugi, T. ; Momiyama, Youichi ; Sugii, T.
Author_Institution
Fujitsu Labs. Ltd., Kanagawa, Japan
fYear
2000
fDate
10-13 Dec. 2000
Firstpage
271
Lastpage
274
Abstract
This paper studies effect of pocket (halo) profile on V/sub th/ fluctuation due to statistical dopant variation by measurement and simulation. A pocket profile significantly enhances V/sub th/ fluctuation by a factor of >15% at worst even if the implantation process variations would be negligible. This is because pocket dopants shrink the area which controls V/sub th/.
Keywords
MOSFET; doping profiles; ion implantation; semiconductor device measurement; semiconductor device models; statistical analysis; MOSFETs; halo profile; implantation process variations; pocket dopant profile; statistical variation; threshold voltage fluctuation; Boron; Capacitance-voltage characteristics; FETs; Fluctuations; Gaussian distribution; Inverse problems; Laboratories; MOSFET circuits; Size control;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-6438-4
Type
conf
DOI
10.1109/IEDM.2000.904309
Filename
904309
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