Title :
Characteristics of p-channel Si nano-crystal memory
Author :
Kwangseok Han ; Ilgweon Kim ; Shungcheol Shin
Author_Institution :
Dept. of EECS, Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
Abstract :
The feasibility of p-channel nano-crystal memory is demonstrated. The programming mechanism of p-channel nano-crystal memory was investigated by charge separation measurement. For small programming voltage, hole tunneling is dominant. However, valence band electron tunneling becomes dominant for large voltage. Finally, the comparison of retention between programmed holes and electrons shows that holes have longer retention time.
Keywords :
MOS memory circuits; PLD programming; flash memories; nanotechnology; tunnelling; Si; charge separation measurement; flash memories; hole tunneling; p-channel nano-crystal memory; programmed electrons; programmed holes; programming mechanism; retention; valence band electron tunneling; Charge carrier processes; Charge measurement; Current measurement; EPROM; MOS devices; MOSFET circuits; Nanoscale devices; Research and development; Tunneling; Voltage;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904318
