DocumentCode :
2885827
Title :
An deflector of the infrared rays based of concentration inhomogeneity in A3 B5 semiconductors
Author :
Kuznetsov, V.A.
Author_Institution :
Saratov State Agrarian Univ., Saratov, Russia
fYear :
2010
fDate :
22-23 Sept. 2010
Firstpage :
203
Lastpage :
204
Abstract :
The effect of concentration inhomogeneity is analyzed for some semiconductors. In InSb this effect occurs under temperature-electrical instability in a magnetic field. In at GaAs-GaP compound, this effect is due to the built-in gradient of static dielectric permeability and electron flow grouping. This effect may be adapted to design an deflector of the infrared rays.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical deflectors; permeability; wide band gap semiconductors; A3 B5 semiconductors; GaAs-GaP; InSb; concentration inhomogeneity effect; deflector; electron flow grouping; infrared rays; magnetic field; static dielectric permeability; temperature-electrical instability; Compounds; Dielectrics; Electronic mail; Magnetic fields; Nonhomogeneous media; Permeability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Actual Problems of Electron Devices Engineering (APEDE), 2010 International Conference on
Conference_Location :
Saratov
Print_ISBN :
978-1-4244-6954-3
Type :
conf
DOI :
10.1109/APEDE.2010.5624049
Filename :
5624049
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2885827
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