A 4Mb DRAM with half internal-voltage bitline precharge

Author

Takada, Masumi ; Takeshima, Toshiaki ; Sakamoto, Makoto ; Shimizu, Tsuyoshi ; Abiko, Hiroshi ; Katoh, T. ; Kikuchi, Masashi ; Takahashi, Satoshi ; Sato, Yuuki ; Inoue, Yasuyuki

Author_Institution

NEC Corporation, Kawasaki, Japan

Volume

XXIX

fYear

1986

fDate

19-21 Feb. 1986

Firstpage

270

Lastpage

271

Keywords

Assembly; Capacitance; Circuits; Clocks; Electrodes; MOS devices; National electric code; Random access memory; Substrates; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference. Digest of Technical Papers. 1986 IEEE International

Conference_Location

Anaheim, CA, USA

Type

DOI

10.1109/ISSCC.1986.1157014

Filename

1157014

Link To Document