DocumentCode
2886216
Title
Internal and external polarization memory loss in single quantum dots
Author
Wang, Q.Q. ; Muller, A. ; Cheng, M.T. ; Zhou, H.J. ; Bianucci, P. ; Shih, C.K.
Author_Institution
Dept. of Phys., Wuhan Univ., Wuhan
fYear
2006
fDate
21-26 May 2006
Firstpage
1
Lastpage
2
Abstract
We study exciton spin relaxation in single semiconductor quantum dots using non-linear resonant optical control. Experiments reveal two distinct channels for spin relaxation, external and internal, ruling out universal freezing of exciton spin relaxation.
Keywords
excitons; optical control; semiconductor quantum dots; exciton spin relaxation; external polarization memory loss; internal polarization memory loss; non-linear resonant optical control; single semiconductor quantum dots; Excitons; Laser excitation; Laser mode locking; Laser transitions; Numerical simulation; Physics; Polarization; Quantum dots; Resonance; Stationary state; (160.6000) Materials, Semiconductors; (300.6470) Spectroscopy, Semiconductors;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location
Long Beach, CA
Print_ISBN
978-1-55752-813-1
Electronic_ISBN
978-1-55752-813-1
Type
conf
DOI
10.1109/CLEO.2006.4629129
Filename
4629129
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