Electron dynamics in n-doped In0.4Ga0.6As/GaAs quantum dot infrared detector structures

Author

Wu, Z.-K. ; Choi, H. ; Norris, T.B. ; Chakrabarti, S. ; Su, X.H. ; Bhattacharya, P.

Author_Institution

EECS Dept., Univ. of Michigan, Ann Arbor, MI

fYear

2006

fDate

21-26 May 2006

Firstpage

1

Lastpage

2

Abstract

Time-resolved mid-infrared-pump, optical-probe differential transmission spectroscopy directly reveals electron dynamics in n-doped quantum dots infrared detector structure. Capturing and intradot relaxation time were measured. Nanosecond-scale dynamics in the n=1 state was also observed.

Keywords

gallium arsenide; high-speed optical techniques; indium compounds; infrared detectors; semiconductor quantum dots; In_0.4Ga_0.6As-GaAs; electron dynamics; intradot relaxation time; nanosecond scale dynamics; optical probe differential transmission spectroscopy; quantum dot infrared detector structures; time resolved mid infrared pump; Contacts; Electron optics; Gallium arsenide; Optical pulse generation; Optical pulses; Optical scattering; Pulse amplifiers; Quantum dots; Substrates; Ultrafast optics; (040.3060) Infrared; (320.7130) Ultrafast processes in condensed matter, including semiconductors;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on

Conference_Location

Long Beach, CA

Print_ISBN

978-1-55752-813-1

Electronic_ISBN

978-1-55752-813-1

Type

conf

DOI

10.1109/CLEO.2006.4629131

Filename

4629131