DocumentCode
2886272
Title
Extending the reliability scaling limit of SiO/sub 2/ through plasma nitridation
Author
Nicollian, P.E. ; Baldwin, G.C. ; Eason, K.N. ; Grider, D.T. ; Hattangady, S.V. ; Hu, J.C. ; Hunter, W.R. ; Rodder, M. ; Rotondaro, A.L.P.
Author_Institution
Silicon Technol. Dev., Texas Instrum. Inc., Dallas, TX, USA
fYear
2000
fDate
10-13 Dec. 2000
Firstpage
545
Lastpage
548
Abstract
We demonstrate a manufacturable remote plasma nitridation process that significantly extends the reliability scaling limit of SiO/sub 2/ based gate dielectrics.
Keywords
dielectric thin films; nitridation; plasma materials processing; reliability; silicon compounds; SiO/sub 2/; SiO/sub 2/ gate dielectric; reliability scaling limit; remote plasma nitridation; Design for quality; Dielectrics; Electric breakdown; Hydrogen; Leakage current; MOS devices; Nitrogen; Plasmas; Stress; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-6438-4
Type
conf
DOI
10.1109/IEDM.2000.904376
Filename
904376
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