GaAs Schottky wrap-gate binary-decision-diagram devices for realization of novel single electron logic architecture

Author

Kasai, S. ; Amemiya, Y. ; Hasegawa, H.

Author_Institution

Res. Centre for Interface Quantum Electron., Hokkaido Univ., Sapporo, Japan

fYear

2000

fDate

10-13 Dec. 2000

Firstpage

585

Lastpage

588

Abstract

Novel single electron binary-decision-diagram (BDD) node devices and circuits based on Schottky wrap-gate (WPG) control of AlGaAs/GaAs nanowires were designed, fabricated and characterized for the first time. The WPG BDD node device showed clear path switching as well as conductance oscillation by WPG voltage control. WPG-based BDD OR logic circuits were also successfully fabricated. It is also shown that more complex-functional BDD circuits can be realized by suitable layouts of WPGs and nanowires.

Keywords

III-V semiconductors; Schottky barriers; binary decision diagrams; gallium arsenide; logic circuits; quantum interference devices; semiconductor quantum wires; AlGaAs-GaAs; AlGaAs/GaAs nanowire; GaAs Schottky wrap-gate voltage control; OR logic circuit; binary decision diagram; conductance oscillation; path switching; single electron device; Binary decision diagrams; Electrons; Gallium arsenide; Logic circuits; Logic design; Logic devices; Nanowires; Quantum dots; Threshold voltage; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904388

Filename

904388