Title :
New Methodology for the Characterization of EEPROM Extrinsic Behaviors
Author :
Medjahed, Djafer ; Yao, Thierry ; Wojciechowski, Dominique ; Gassot, Pierre ; Yameogo, Michael
Author_Institution :
AMI Semicond. Belgium BVBA, Oudenaarde
Abstract :
In medical and automotive applications, device reliability needs to be assessed with great precision. It is therefore mandatory to investigate deeply the extrinsic behavior of memory devices to optimize their operating specifications in order to obtain the best endurance and retention characteristics. In this paper, we describe a new methodology to characterize the extrinsic behaviors of EEPROM devices that can be extended to other type of components. We fully describe the architecture of the test structure that we have developed. Finally, we present results that validate this new methodology.
Keywords :
EPROM; semiconductor device models; semiconductor device reliability; semiconductor storage; EEPROM characterization; EEPROM device extrinsic behavior; automotive applications; medical applications; memory devices; semiconductor device reliability; Ambient intelligence; Circuits; EPROM; Error correction codes; Extrapolation; Medical tests; Microelectronics; Semiconductor device reliability; Semiconductor device testing; Voltage; CAST; EEPROM; Semiconductor device reliability; Semiconductor memories; Test structures;
Conference_Titel :
Microelectronic Test Structures, 2007. ICMTS '07. IEEE International Conference on
Conference_Location :
Tokyo
Print_ISBN :
1-4244-0781-8
Electronic_ISBN :
1-4244-0781-8
DOI :
10.1109/ICMTS.2007.374455