Title :
A notched metal gate MOSFET for sub-0.1 /spl mu/m operation
Author :
Pidin, S. ; Mushiga, M. ; Shido, H. ; Yamamoto, T. ; Sambonsugi, Y. ; Tamura, Y. ; Sugii, T.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
We demonstrate a notched W/TiN gate MOSFET for which both threshold voltage adjustment and suppression of the short channel effect are achieved simultaneously. To lower the threshold voltage, low channel doping concentration and high dose-low energy counter-doping are combined with high-dose tilted pocket implant performed using notched gate. Due to presence of notches, near optimal pocket implant distribution in the channel is achieved.
Keywords :
MOSFET; doping profiles; ion implantation; titanium compounds; tungsten; 0.1 micron; W-TiN; channel doping; counter-doping; notched metal gate MOSFET; pocket implant distribution; short channel effect; threshold voltage; Capacitance; Implants; MOSFET circuits; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904405
