Dynamic threshold voltage damascene metal gate MOSFET (DT-DMG-MOS) with low threshold voltage, high drive current, and uniform electrical characteristics

Author

Yagishita, A. ; Saito, T. ; Inumiya, S. ; Matsuo, K. ; Tsunashima, Y. ; Suguro, K. ; Arikado, T.

Author_Institution

Process & Manuf. Eng. Center, Toshiba Corp., Yokohama, Japan

fYear

2000

fDate

10-13 Dec. 2000

Firstpage

663

Lastpage

666

Abstract

We propose dynamic threshold-voltage damascene metal gate MOSFET (DT-DMG-MOS) technology for very low voltage operation (0.7 V). By using this technology, we found that low threshold voltage (about 0.15 V reduction for CMOS), high drive current, excellent subthreshold swing (about 60 mV/decade), and uniform electrical characteristics (great reduction of threshold voltage deviation) were obtained in the transistors with mid-gap work function metal gates (Al/TiN or W/TiN) and low supply voltage (0.7 V).

Keywords

MOSFET; low-power electronics; 0.7 V; Al-TiN; W-TiN; drive current; dynamic threshold voltage damascene metal gate MOSFET; electrical characteristics; low-voltage operation; subthreshold swing; threshold voltage; work function; Boron; CMOS technology; Degradation; Electric variables; Low voltage; MOSFET circuits; Metal-insulator structures; Silicon; Threshold voltage; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904406

Filename

904406