A 0.2-/spl mu/m 180-GHz-f/sub max/ 6.7-ps-ECL SOI/HRS self aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications

Author

Washio, K. ; Ohue, E. ; Shimamoto, H. ; Oda, K. ; Hayami, R. ; Kiyota, Y. ; Tanabe, M. ; Kondo, M. ; Hashimoto, T. ; Harada, T.

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

fYear

2000

fDate

10-13 Dec. 2000

Firstpage

741

Lastpage

744

Abstract

A 0.2-/spl mu/m self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction bipolar transistor (HBT)/CMOS technology with high-quality passive elements, made by using SOI on a high-resistivity substrate (SOI/HRS), was developed. The SiGe HBTs exhibited high-frequency, high-speed capability with f/sub max/ of 180 GHz and a fast ECL-gate delay of 6.7 ps.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MMIC; delays; emitter-coupled logic; high-speed integrated circuits; mixed analogue-digital integrated circuits; semiconductor materials; silicon-on-insulator; 0.2 micron; 180 GHz; 6.7 ps; ECL-gate delay; SiGe; high-quality passive elements; high-resistivity substrate; high-speed capability; high-speed digital applications; self aligned SEG HBT/CMOS technology; CMOS process; CMOS technology; Delay; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; MIM capacitors; Resistors; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904424

Filename

904424