Improved Test Structure for Thermnal Resistance Scaling Study in Power Devices

Author

Canepari, Anna ; Bertrand, Guillaume ; Giry, Alexandre ; Minondo, Michel ; Ortolland, Sylvie ; Jaouen, Hervé ; Szelag, Bertrand ; Mourier, Jocelyne ; Chante, Jean-Pierre

Author_Institution

STMicroelectron., Crolles

fYear

2007

fDate

19-22 March 2007

Firstpage

222

Lastpage

225

Abstract

Power MOSFET´s suffer from a strong self-heating effect. This phenomenon is currently modeled with a thermal resistance Rth. Understanding the evolution of the Rth with device scaling is today an important issue. This paper presents an improved test structure for temperature measurements in multifinger LDMOS power devices. This structure allows to access the temperature of every device finger. With this approach, impact of boundary effects and thermal coupling on Rth can be investigated. Measurements results are presented and a basic distributed model is used to reproduce Rth behavior.

Keywords

power MOSFET; semiconductor device testing; thermal resistance measurement; boundary effects; multifinger LDMOS power devices; power MOSFET; self-heating effect; temperature measurement; thermal coupling; thermal resistance scaling study; Automatic testing; Desktop publishing; Electric resistance; Electrical resistance measurement; Fingers; Measurement standards; Microelectronics; Temperature measurement; Temperature sensors; Thermal resistance; Rth extraction; gate resistance measurements; scaling; self-heating;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2007. ICMTS '07. IEEE International Conference on

Conference_Location

Tokyo

Print_ISBN

1-4244-0781-8

Electronic_ISBN

1-4244-0781-8

Type

conf

DOI

10.1109/ICMTS.2007.374488

Filename

4252438