Title :
Calculation of energy characteristics of Si1−xGex-Si quantum-well heterostructures using k·p method
Author :
Ushakov, D.V. ; Kononenko, V.K.
Author_Institution :
Belarussian State Univ., Minsk, Belarus
Abstract :
Numerical calculations of energy characteristics of quantum-well structures based on Si1-xGex-Si have been performed using the four-band k·p method. It is shown that varying the thickness of the active layer and the height and width of potential barriers one can control the frequency ω of optical transitions. The analytical expressions for ħω are established, which are in good agreement with the numerical calculations by the k·p method, exactly define the limits of changes in ħω.
Keywords :
Ge-Si alloys; band structure; elemental semiconductors; numerical analysis; semiconductor quantum wells; silicon; Si1-xGex-Si; four-band k-p method; numerical analysis; optical transitions; potential barriers; quantum well heterostructures; Dispersion; Effective mass; Electric potential; Laser modes; Quantum well lasers; Silicon;
Conference_Titel :
Laser and Fiber-Optical Networks Modeling (LFNM), 2010 10th International Conference on
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-6994-9
DOI :
10.1109/LFNM.2010.5624178
