Title :
Novel parameter extraction method for low field drain current of nano-scaled MOSFETs
Author_Institution :
FUJITSU Ltd., Tokyo
Abstract :
We developed parameter extraction method based on a BSIM3-like compact model to analyze low field drain current with size dependent mobility in nano-scaled MOSFETs. Our new straightforward algorithm has made it possible to automatically extract model parameters with high accuracy and robustness. It is applicable to wide variation of device sizes, structures and materials.
Keywords :
MOSFET; carrier mobility; electric current; nanoelectronics; semiconductor device models; BSIM3-like compact model; automatic parameters extraction model; low field drain current; nanoscaled MOSFET; parameter extraction method; size dependent mobility; Current measurement; Equations; Etching; Intrusion detection; MOSFETs; Microelectronics; Parameter extraction; Robustness; Stress; Testing;
Conference_Titel :
Microelectronic Test Structures, 2007. ICMTS '07. IEEE International Conference on
Conference_Location :
Tokyo
Print_ISBN :
1-4244-0781-8
Electronic_ISBN :
1-4244-0781-8
DOI :
10.1109/ICMTS.2007.374496
