Title :
Yield management methodology for SoC vertical yield ramp
Author :
Miyamoto, K. ; Inoue, K. ; Tamura, I. ; Kondo, N. ; Inoto, H. ; Ito, I. ; Kasahara, K. ; Oshikiri, Y.
Author_Institution :
Syst. LSI Div., Toshiba Corp., Yokohama, Japan
Abstract :
This paper proposes a new yield management method for the SoC (System on a Chip) VYR (vertical yield ramp). In this method, test structures and analysis methods are adjusted to quantitatively analyze and optimize failure modes for improved yield. To verify the new methodology, two types of test chips were designed to monitor and distinguish the various failure modes affecting typical LSI product chips. It is concluded that the new methodology can diagnose and improve these several failure modes simultaneously to achieve the SoC VYR.
Keywords :
failure analysis; integrated circuit testing; integrated circuit yield; large scale integration; LSI product; failure mode; system-on-a-chip; test structure; vertical yield ramp; yield management; Condition monitoring; Equations; Facsimile; Failure analysis; Indium tin oxide; Large scale integration; Optimization methods; Random access memory; System testing; System-on-a-chip;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904448