• DocumentCode
    2887690
  • Title

    Room-temperature operation of multifunctional single-electron transistor logic

  • Author

    Uchida, K. ; Koga, J. ; Ohba, R. ; Toriumi, A.

  • Author_Institution
    Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan
  • fYear
    2000
  • fDate
    10-13 Dec. 2000
  • Firstpage
    863
  • Lastpage
    865
  • Abstract
    Successfully fabricated SETs operating at room temperature with the highest peak-to-valley current ratio (PVCR) ever reported, and demonstrated, for the first time, the room-temperature operation of a SET/CMOS hybrid circuit. In addition, the authors have verified that the function of a SET-pMOS circuit can be programmed from a converter/inverter to an inverter/converter by utilizing a nonvolatile memory function incorporated in the SET, suggesting that the programmable multiple functionality will be realized in logic circuits consisting of SETs with a nonvolatile memory function. These results open a new way to the realization of future low-power super-design-flexible field-programmable logic LSIs by using SETs having a memory function.
  • Keywords
    CMOS logic circuits; large scale integration; low-power electronics; single electron transistors; SET/CMOS hybrid circuit; low-power super-design-flexible field-programmable logic LSIs; memory function; multifunctional single-electron transistor logic; nonvolatile memory function; peak-to-valley current ratio; programmable multiple functionality; room-temperature operation; CMOS logic circuits; CMOS memory circuits; Functional programming; Inverters; Logic circuits; Logic programming; Nonvolatile memory; Single electron transistors; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
  • Conference_Location
    San Francisco, CA, USA
  • Print_ISBN
    0-7803-6438-4
  • Type

    conf

  • DOI
    10.1109/IEDM.2000.904454
  • Filename
    904454