• DocumentCode
    2887907
  • Title

    Ultra-low-voltage operation: Device perspective

  • Author

    Hiramoto, Toshiro

  • Author_Institution
    Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2011
  • fDate
    1-3 Aug. 2011
  • Firstpage
    59
  • Lastpage
    60
  • Abstract
    The challenges for ultra-low-voltage operation are reviewed from the device side. The degradations of transistor variability and subthreshold swing are the main obstacles for the ultra-low-voltage operation. A new transistor structure with fully-depleted channel is discussed as a possible solution.
  • Keywords
    MOSFET; low-power electronics; tunnel transistors; FinFET; TFET; fully-depleted transistors; transistor variability; tunnel FET; ultralow-voltage operation; Fluctuations; Logic gates; MOSFETs; Random access memory; Resource description framework; CMOS; SRAM; fully depleted SOI; tunnel FET; variability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Low Power Electronics and Design (ISLPED) 2011 International Symposium on
  • Conference_Location
    Fukuoka
  • ISSN
    Pending
  • Print_ISBN
    978-1-61284-658-3
  • Electronic_ISBN
    Pending
  • Type

    conf

  • DOI
    10.1109/ISLPED.2011.5993605
  • Filename
    5993605
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2887907