• DocumentCode
    2890946
  • Title

    Multiple Upsets Tolerance in SRAM Memory

  • Author

    Argyrides, Costas ; Zarandi, Hamid R. ; Pradhan, Dhiraj K.

  • Author_Institution
    Dept. of Comput. Sci., Bristol Univ.
  • fYear
    2007
  • fDate
    27-30 May 2007
  • Firstpage
    365
  • Lastpage
    368
  • Abstract
    This paper presents a high level method called matrix code to protect SRAM-based memories against multiple bit upsets. The proposed method combines hamming code and parity code to assure the reliability of memory in presence of multiple bit-upsets with low area and performance overhead. The method is evaluated using one million multiple-fault injection experiments; next reliability and MTTF of the protected memories are estimated based on fault injection experiments and several equations. The fault detection/correction coverage are also calculated and compared with previous methods i.e., Reed-Muller and hamming code. The results reveal that the proposed method behaves better than these methods in terms of fault detection and correction of multiple faults regarding to the area overhead.
  • Keywords
    Hamming codes; Reed-Muller codes; SRAM chips; high level synthesis; parity check codes; reliability; Reed-Muller code; SRAM memory; correction coverage; fault detection; hamming code; high level method; matrix code; multiple upsets tolerance; multiple-fault injection; parity code; reliability; Circuit faults; Costs; Energy consumption; Equations; Error correction codes; Fault detection; Integrated circuit noise; Integrated circuit technology; Protection; Random access memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on
  • Conference_Location
    New Orleans, LA
  • Print_ISBN
    1-4244-0920-9
  • Electronic_ISBN
    1-4244-0921-7
  • Type

    conf

  • DOI
    10.1109/ISCAS.2007.378465
  • Filename
    4252647