DocumentCode
2890946
Title
Multiple Upsets Tolerance in SRAM Memory
Author
Argyrides, Costas ; Zarandi, Hamid R. ; Pradhan, Dhiraj K.
Author_Institution
Dept. of Comput. Sci., Bristol Univ.
fYear
2007
fDate
27-30 May 2007
Firstpage
365
Lastpage
368
Abstract
This paper presents a high level method called matrix code to protect SRAM-based memories against multiple bit upsets. The proposed method combines hamming code and parity code to assure the reliability of memory in presence of multiple bit-upsets with low area and performance overhead. The method is evaluated using one million multiple-fault injection experiments; next reliability and MTTF of the protected memories are estimated based on fault injection experiments and several equations. The fault detection/correction coverage are also calculated and compared with previous methods i.e., Reed-Muller and hamming code. The results reveal that the proposed method behaves better than these methods in terms of fault detection and correction of multiple faults regarding to the area overhead.
Keywords
Hamming codes; Reed-Muller codes; SRAM chips; high level synthesis; parity check codes; reliability; Reed-Muller code; SRAM memory; correction coverage; fault detection; hamming code; high level method; matrix code; multiple upsets tolerance; multiple-fault injection; parity code; reliability; Circuit faults; Costs; Energy consumption; Equations; Error correction codes; Fault detection; Integrated circuit noise; Integrated circuit technology; Protection; Random access memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on
Conference_Location
New Orleans, LA
Print_ISBN
1-4244-0920-9
Electronic_ISBN
1-4244-0921-7
Type
conf
DOI
10.1109/ISCAS.2007.378465
Filename
4252647
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