Analysis of models for electrostatic discharge (ESD) and semiconductor devices

Author

Greason, William D.

Author_Institution

Dept. of Electr. Eng., Univ. of Western Ontario, London, Ont., Canada

fYear

1994

fDate

2-6 Oct 1994

Firstpage

1627

Abstract

Various models are used to simulate the electrostatic discharge (ESD) event associated with semiconductor devices; these include the human body model (HBM), the charged device model (CDM), and the field induced charged device model (FCDM). Maxwell´s method is used to analyze these models to determine device potentials and the transfer of charge during typical discharges; existing test methods are also examined. A charge injection test method is introduced which provides control of the charge transferred to the device under test; it is proposed as a means to study charge related phenomena due to ESD

Keywords

charge exchange; electromagnetic induction; electrostatic discharge; semiconductor device models; ESD; Maxwell´s method; charge injection test method; charge related phenomena; charge transfer; charged device model; device potentials; electrostatic discharge; field induced charged device model; human body mode; semiconductor devices; Biological system modeling; Capacitance; Conductors; Electrostatic analysis; Electrostatic discharge; Foot; Footwear; Humans; Maxwell equations; Semiconductor devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Society Annual Meeting, 1994., Conference Record of the 1994 IEEE

Conference_Location

Denver, CO

Print_ISBN

0-7803-1993-1

Type

conf

DOI

10.1109/IAS.1994.377645

Filename

377645