DocumentCode
2895124
Title
Low noise 400 fs pulse generation by monolithic semiconductor mode-locked laser and soliton pulse compression
Author
Kroh, Marcel ; Hüttl, Bernd ; Ferber, Sebastian ; Weber, Hans-Georg
Author_Institution
Fraunhofer Inst. for Telecommun., Heinrich-Hertz-Inst., Berlin, Germany
fYear
2005
fDate
12-17 June 2005
Firstpage
125
Abstract
In the present paper, we describe pulse generation by a monolithic semiconductor MLL (M-MLL). In this case, the change of the absorber strength by the absorber voltage offers another way for the reduction of the spectral width and thus the reduction of phase noise. The investigated pulse source is a multi-section buried heterostructure laser having an active and a passive part.
Keywords
laser mode locking; optical pulse compression; optical pulse generation; optical solitons; semiconductor lasers; 400 fs; absorber strength; monolithic semiconductor mode-locked laser; multisection buried heterostructure laser; phase noise reduction; pulse generation; pulse source; soliton pulse compression; spectral width; Laser mode locking; Laser noise; Noise generators; Optical pulse compression; Phase noise; Pulse generation; Semiconductor device noise; Semiconductor lasers; Solitons; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on
Print_ISBN
0-7803-8974-3
Type
conf
DOI
10.1109/CLEOE.2005.1567913
Filename
1567913
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