An 80μVrms-temporal-noise 82dB-dynamic-range CMOS Image Sensor with a 13-to-19b variable-resolution column-parallel folding-integration/cyclic ADC

Author

Seo, Min-Woong ; Suh, Sungho ; Iida, Tetsuya ; Watanabe, Hiroshi ; Takasawa, Taishi ; Akahori, Tomoyuki ; Isobe, Keigo ; Watanabe, Takashi ; Itoh, Shinya ; Kawahito, Shoji

Author_Institution

Shizuoka Univ., Hamamatsu, Japan

fYear

2011

fDate

20-24 Feb. 2011

Firstpage

400

Lastpage

402

Abstract

Low-noise CMOS image sensors (CIS) employing column-parallel amplifiers that significantly reduce temporal noise, as well as electron-multiplication CCD (EM-CCD) image sensors are becoming popular for very-low-light-level imaging. This paper presents a column-parallel ADC for CMOS imagers using a successive operation of folding-integration ADC (FI-ADC) and cyclic ADC for attaining very low noise, high gray-scale resolution and resulting wide dynamic range.

Keywords

CMOS image sensors; amplifiers; analogue-digital conversion; circuit noise; column-parallel ADC; column-parallel amplifiers; low-noise CMOS image sensors; noise figure 82 dB; reduce temporal noise; temporal-noise-dynamic-range CMOS image sensor; variable resolution column-parallel folding; CMOS image sensors; Dynamic range; Image resolution; Noise; Pixel; Radiation detectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2011 IEEE International

Conference_Location

San Francisco, CA

ISSN

0193-6530

Print_ISBN

978-1-61284-303-2

Type

conf

DOI

10.1109/ISSCC.2011.5746369

Filename

5746369