DocumentCode
28971
Title
Towards in vivo biosensors for low-cost protein sensing
Author
Ramesh, Archana ; Ren, Fengyuan ; Berger, P.R. ; Casal, Patricia ; Theiss, A. ; Gupta, Swastik ; Lee, S.C.
Author_Institution
Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA
Volume
49
Issue
7
fYear
2013
fDate
March 28 2013
Firstpage
450
Lastpage
451
Abstract
In vivo biosensing requires stable transistor operation in high-salt concentration bodily fluids while exhibiting impermeability to mobile alkali ions that would otherwise render the metal-oxide-semiconductor (MOS) threshold voltage to drift. Metal oxide semiconductor capacitor structures using Al2O3 as the gate dielectric were soaked in a sterile physiological buffer solution (PBS) up to 24 hours and for thicknesses from 100 to 10 nm. The triangular voltage sweep technique characterised alkali ion penetration, and measured no detectable alkali ions for the Al2O3 capacitors. By contrast, the dose of alkali ions in silicon dioxide MOS capacitors steadily increased with increasing soak times in the PBS solution.
Keywords
MOS capacitors; biochemistry; biosensors; elemental semiconductors; molecular biophysics; nanoelectronics; nanofabrication; permeability; proteins; silicon compounds; transistors; Al2O3 capacitors; PBS solution; SiO2; alkali ion dose; alkali ion penetration; detectable alkali ions; gate dielectric; high-salt concentration bodily fluids; impermeability; in vivo biosensors; metal oxide semiconductor capacitor; metal-oxide-semiconductor; mobile alkali ions; protein sensing; silicon dioxide MOS capacitors; size 100 nm to 10 nm; sterile physiological buffer solution; threshold voltage; transistor operation; triangular voltage sweep technique;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2012.4283
Filename
6504957
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