• DocumentCode
    2897356
  • Title

    Session 14 overview / memory: High-performance embedded memory

  • Author

    Chang, Leland ; Rickert, Peter

  • Author_Institution
    IBM T. J. Watson Research Center, Yorktown Heights, NY
  • fYear
    2011
  • fDate
    20-24 Feb. 2011
  • Firstpage
    252
  • Lastpage
    253
  • Abstract
    Summary form only given. Embedded memory plays a crucial role in today´s VLSI applications — from high-performance computing to low-power consumer electronics. While scaling of technology feature size to the 32nm and 28nm nodes has enabled ever larger and higher performance on-die memories, it has also created growing challenges for the embedded memory designer. Growing device variability and power limitations are driving innovative solutions to maintain robustness and area efficiency in such aggressively scaled memories. In particular, peripheral circuit assist features have become the key to maintaining cell read and write margins to enable low voltage operation for dense SRAM caches. New strategies ranging from circuit-level techniques to fundamental changes in array architecture can also enable significant gains in area and power efficiency.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2011 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    978-1-61284-303-2
  • Type

    conf

  • DOI
    10.1109/ISSCC.2011.5746447
  • Filename
    5746447