DocumentCode
2899374
Title
Comparison of noise characteristics of GaAs and GaN Schottky diodes for millimeter and submillimeter applications
Author
Pardo, Diego ; Perez, Sandra ; Grajal, Jesús ; Mateos, Javier ; González, Tomás
Author_Institution
Univ. Politec. de Madrid, Madrid, Spain
fYear
2011
fDate
12-16 June 2011
Firstpage
106
Lastpage
109
Abstract
A Monte Carlo (MC) analysis of the noise spectra of GaAs and GaN Schottky barrier diodes (SBDs) operating under static and time varying conditions is carry out in this paper. Especial attention is payed to the dependence of the noise spectra with the structure of the diode, temperature and working conditions. Published noise analytical models of SBDs are employed to verify the results obtained from MC simulations.
Keywords
Monte Carlo methods; Schottky diodes; gallium arsenide; millimetre wave diodes; submillimetre wave diodes; Monte Carlo analysis; Schottky barrier diodes; millimeter applications; noise analytical models; noise spectra; static varying conditions; submillimeter applications; time varying conditions; Analytical models; Gallium arsenide; Gallium nitride; Noise; Resonant frequency; Schottky diodes; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Noise and Fluctuations (ICNF), 2011 21st International Conference on
Conference_Location
Toronto, ON
Print_ISBN
978-1-4577-0189-4
Type
conf
DOI
10.1109/ICNF.2011.5994274
Filename
5994274
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