High-efficiency a-Si/c-Si heterojunction solar cell

Author

Sawada, Toru ; Terada, Norihiro ; Tsuge, Sadaji ; Baba, Toshiaki ; Takahama, Tsuyoshi ; Wakisaka, Kenichiro ; Tsuda, Shinya ; Nakano, Shoichi

Author_Institution

New Mater. Res. Center, Sanyo Electr. Co. Ltd., Osaka, Japan

Volume

2

fYear

1994

fDate

5-9 Dec 1994

Firstpage

1219

Abstract

An aperture-area conversion efficiency of 20.0% (intrinsic efficiency: 21.0%) has been achieved for a 1.0 cm² CZ n-type single crystalline silicon (c-Si) solar cell, by using the “HIT (heterojunction with intrinsic thin-layer)” structure on both sides of the cell. This is the world´s highest value for a c-Si solar cell in which the junction is fabricated at a low temperature of below 200°C. In this paper, the junction fabrication technologies and features of the HIT structure are reviewed. The stability under light and thermal exposure, and the temperature dependence on performance of a high-efficiency HIT solar cell are also reported

Keywords

amorphous semiconductors; elemental semiconductors; p-n heterojunctions; semiconductor thin films; silicon; solar cells; 20 percent; 21 percent; Si; a-Si/c-Si heterojunction solar cell; aperture-area conversion efficiency; heterojunction with intrinsic thin-layer; high-efficiency; intrinsic efficiency; junction fabrication; light exposure; stability; temperature dependence; thermal exposure; Crystallization; Fabrication; Furnaces; Heterojunctions; Passivation; Photovoltaic cells; Plasma temperature; Silicon; Surface texture; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.519952

Filename

519952