Title :
High efficiency broadband power amplifier MMIC
Author :
Johnson, K. ; Lum, A. ; Nelson, S. ; Reese, E. ; Salzman, K.
Author_Institution :
Texas Instruments, Dallas, TX, USA
Abstract :
A GaAs broadband, dual-channel, high-efficiency power amplifier monolithic microwave integrated circuit (MMIC) is presented. The average performance for a single channel of the power amplifier was 18.0-dB small-signal gain, 16% power-added efficiency, and 2-dB compressed output power of 29.4 dBm from 6 to 18 GHz at 25 degrees C. The two channels combined off chip achieved 32-dBm average output power. This 0.5- mu m ion-implanted MESFET amplifier MMIC has been demonstrated in volume production with 154 wafer starts over three months, resulting in a 30% total yield through fixtured RF test.<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; microwave amplifiers; power amplifiers; wideband amplifiers; 0.5 micron; 1 W; 16 percent; 18 dB; 25 degC; 6 to 18 GHz; GaAs; average output power; broadband power amplifier MMIC; compressed output power; ion-implanted MESFET amplifier MMIC; power-added efficiency; small-signal gain; total yield through fixtured RF test; volume production; Broadband amplifiers; Gallium arsenide; High power amplifiers; MMICs; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits; Performance gain; Power amplifiers; Power generation;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1992. Digest of Papers, IEEE 1992
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0677-5
DOI :
10.1109/MCS.1992.185993
