Monolithic circuits for 60 GHz communication systems using pseudomorphic HEMT process

Author

Gamand, P. ; Suchet, P. ; Iost, M. ; Pertus, M. ; Collet, A. ; Bellaiche, J. ; Rolland, P.A. ; Haeze, N.

Author_Institution

Lab. d´Electron. Phillips, Limeil-Brevannes, France

fYear

1992

fDate

1-3 June 1992

Firstpage

65

Lastpage

67

Abstract

A wideband image rejection mixer and a high real estate efficiency amplifier were designed and fabricated with a 0.25- mu m pseudomorphic high-electron-mobility-transistor (HEMT) process. The mixer, integrated on 0.6 mm/sup 2/, included an in-phase power splitter. It exhibited better than 30 dB of image rejection from 52 to 60 GHz with 14 dB of conversion loss including the power splitter. Combined with two 0.3-mm/sup 2/ IF monolithic amplifiers, the mixer exhibited 8 to 9 dB of conversion gain from 0.5 to 3 GHz. The amplifier, operating around 62-63 GHz, exhibited better than 8 dB/mm/sup 2/ gain density, with an input/output I/O voltage standing-wave ratio (VSWR) of 2.5.<>

Keywords

MMIC; field effect integrated circuits; microwave amplifiers; mixers (circuits); 0.25 micron; 14 dB; 52 to 60 GHz; 62 to 63 GHz; 8 to 9 dB; I/O voltage standing-wave ratio; IF monolithic amplifiers; conversion gain; conversion loss; gain density; high real estate efficiency amplifier; in-phase power splitter; pseudomorphic HEMT process; wideband image rejection mixer; Bandwidth; Circuits; Gain; Image converters; Microwave amplifiers; Mixers; PHEMTs; Radio frequency; Radiofrequency amplifiers; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1992. Digest of Papers, IEEE 1992

Conference_Location

Albuquerque, NM, USA

Print_ISBN

0-7803-0677-5

Type

conf

DOI

10.1109/MCS.1992.185999

Filename

185999