GaAs monolithic image rejection down-converter for point-to-multipoint communication systems

Author

Bonato, G.L. ; Boveda, A.

Author_Institution

Telettra Espana SA, Madrid, Spain

fYear

1992

fDate

1-3 June 1992

Firstpage

131

Lastpage

134

Abstract

A fully integrated GaAs monolithic image rejection downconverter for L/S-band operation is presented. All the necessary subcircuits, such as the RF splitter, the local oscillator (LO) phase shifter, two mixers, and its biasing circuits, were included inside a GaAs chip. Only an IF hybrid was needed as an external component. Experimental results verified the good operation of the device, showing more than 20 dB of image rejection, 8-dB gain conversion, 30-dB LO-to-IF isolation, and 20-dB LO-to-RF isolation throughout the operating band. The monolithic microwave integrated circuit (MMIC) contained 18 MESFETs and 40 passive components in a 1.2-mm*3-mm area.<>

Keywords

III-V semiconductors; MMIC; digital radio systems; frequency convertors; microwave links; mixers (circuits); phase shifters; GaAs; L/S-band operation; LO-to-IF isolation; RF splitter; biasing circuits; digital radio; local oscillator; mixers; monolithic image rejection down-converter; monolithic microwave integrated circuit; passive components; phase shifter; point-to-multipoint communication systems; Gallium arsenide; Image converters; Local oscillators; MESFET integrated circuits; MMICs; Microwave devices; Microwave integrated circuits; Monolithic integrated circuits; Phase shifters; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1992. Digest of Papers, IEEE 1992

Conference_Location

Albuquerque, NM, USA

Print_ISBN

0-7803-0677-5

Type

conf

DOI

10.1109/MCS.1992.186017

Filename

186017