Title :
SiGe HBT-based active cold load: Design, characterization and stability measurements
Author :
de la Jarrige, E. Leynia ; Escotte, L. ; Gonneau, E. ; Goutoule, J.M.
Author_Institution :
LAAS, Univ. de Toulouse, Toulouse, France
Abstract :
We report experimental results concerning the noise performance and the stability of an active cold load (ACL) realized with an SiGe heterojunction bipolar transistor at microwave frequency (1.4 GHz). The ACL exhibits return loss higher than 35 dB and a noise temperature less than 66 K. Stability measurements performed over 4 months with a dedicated noise injection radiometer indicates that this active load is very stable.
Keywords :
Ge-Si alloys; III-V semiconductors; heterojunction bipolar transistors; radiometers; stability; HBT-based active cold load; SiGe; frequency 1.4 GHz; heterojunction bipolar transistor; microwave frequency; noise injection radiometer; stability measurements; Circuit stability; Microwave radiometry; Noise; Noise measurement; Stability analysis; Temperature measurement; Thermal stability; SiGe heterojunction bipolar transistor; active cold load; noise temperature; radiometer; stability;
Conference_Titel :
Noise and Fluctuations (ICNF), 2011 21st International Conference on
Conference_Location :
Toronto, ON
Print_ISBN :
978-1-4577-0189-4
DOI :
10.1109/ICNF.2011.5994335
