Title :
A double balanced 3-18 GHz resistive HEMT monolithic mixer
Author :
Chen, T.H. ; Chang, K.W. ; Bui, S.B.T. ; Liu, L.C.T. ; Pak, S.
Author_Institution :
TRW, Redondo Beach, CA, USA
Abstract :
A double-balanced (DB) 3-18-GHz resistive high electron mobility transistor (HEMT) monolithic mixer has been developed. This mixer consisted of a AlGaAs-InGaAs HEMT quad, an active local oscillator (LO) balun, and two passive baluns, RF and IF. At 16-dBm LO power, this mixer achieved conversion losses of 7.5-9.0 dB for 4-14 GHz RF and 7.5-11.0 dB for 3-18 GHz RF. The simulated conversion loss was in agreement with the measurement results. A third-order input intercept of +26 dBm was achieved for a 10-11 GHz RF and 1 GHz IF at a LO drive of 16 dBm. This design is for a DB resistive HEMT MMIC mixer covering up to 6:1 bandwidth.<>
Keywords :
MMIC; field effect integrated circuits; high electron mobility transistors; mixers (circuits); 3 to 18 GHz; 7.5 to 11 dB; AlGaAs-InGaAs; HEMT quad; MMIC mixer; SHF; active LO balun; conversion loss; double balanced; local oscillator; mobility transistor; passive baluns; resistive HEMT monolithic mixer; third-order input intercept; Bandwidth; HEMTs; Impedance matching; MESFETs; Microwave circuits; Noise figure; RF signals; Radio frequency; Schottky diodes; Voltage;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1992. Digest of Papers, IEEE 1992
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0677-5
DOI :
10.1109/MCS.1992.186027
