Title :
RTS and 1/f noise in Ge nanowire transistors
Author :
Pogany, D. ; Zeiner, C. ; Bychikhin, S. ; Burchhart, T. ; Lugstein, A. ; Vandamme, L.K.J.
Author_Institution :
Inst. for Solid State Electron., Vienna Univ. of Technol., Vienna, Austria
Abstract :
Random telegraph signal (RTS) and 1/f noise is investigated in Ge nanowire field effect transistors with NiGe Ohmic contacts and a Si/SiO2 back gate. Dominant, trap-related, two-level or multilevel RTS noise with relative amplitude in the 10-30% range is usually observed at drain currents below ID=1nA. For higher currents, 1/f noise becomes dominant. With the current increase, the normalized power spectral density (SI/ID2) is first independent on ID and then drops as ID-1. Considering dominant mobility fluctuations due to scattering on surface defects a Hooge parameter of 4×10-3 has been estimated.
Keywords :
1/f noise; elemental semiconductors; field effect transistors; germanium; nanowires; nickel compounds; ohmic contacts; silicon; silicon compounds; 1-f noise; Hooge parameter; NiGe; RTS; Si-SiO2; dominant mobility fluctuations; multilevel RTS noise; nanowire field effect transistors; normalized power spectral density; ohmic contacts; random telegraph signal; surface defect scattering; Charge carrier processes; Current measurement; FETs; Fluctuations; Logic gates; Noise; Silicon; 1/ƒ noise; Ge nanowire; Hooge parameter; RTS noise; field effect transistor; low-frequency noise;
Conference_Titel :
Noise and Fluctuations (ICNF), 2011 21st International Conference on
Conference_Location :
Toronto, ON
Print_ISBN :
978-1-4577-0189-4
DOI :
10.1109/ICNF.2011.5994345
