A monolithic V-band upconverter, using 0.2 mu m InGaAs/GaAs pseudomorphic HEMT technology

Author

Wang, H. ; Nelson, B. ; Shaw, L. ; Kasody, R. ; Hwang, Y. ; Jones, W. ; Brunone, D. ; Sholly, M. ; Maguire, J. ; Best, T.

Author_Institution

TRW, Redondo Beach, CA, USA

fYear

1992

fDate

1-3 June 1992

Firstpage

197

Lastpage

200

Abstract

The authors present the design and performance of a complete monolithic upconverter macrocell using 0.2- mu m InGaAs/GaAs pseudomorphic high-electron-mobility-transistor (HEMT) technology. Individual components, including a 2-10-GHz IF amplifier, a V-band upconverting mixer, and a V-band amplifier are described. Both linear and nonlinear circuit simulations were performed during the design to predict the circuit performance. The individual circuit designs are outlined. The measured results demonstrated a conversion gain of 10 dB at V-band by injecting a 2-10-GHz IF frequency with a local-oscillator (LO) drive of 10 dBm at 54 GHz.<>

Keywords

III-V semiconductors; MMIC; field effect integrated circuits; frequency convertors; gallium arsenide; high electron mobility transistors; indium compounds; 0.2 micron; 10 dB; 2 to 10 GHz; 54 GHz; IF amplifier; InGaAs-GaAs; MMIC upconvertor; V-band; high-electron-mobility-transistor; linear circuit simulation; monolithic upconverter macrocell; nonlinear circuit simulations; pseudomorphic HEMT technology; upconverting mixer; Circuit optimization; Circuit simulation; Circuit synthesis; Gallium arsenide; HEMTs; Indium gallium arsenide; Macrocell networks; Nonlinear circuits; PHEMTs; Predictive models;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1992. Digest of Papers, IEEE 1992

Conference_Location

Albuquerque, NM, USA

Print_ISBN

0-7803-0677-5

Type

conf

DOI

10.1109/MCS.1992.186034

Filename

186034