• DocumentCode
    2901288
  • Title

    Modelling of magnetoresistive micro-sensors

  • Author

    Hill, E.W.

  • Author_Institution
    Sch. of Eng., Manchester Univ., UK
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    42552
  • Lastpage
    42555
  • Abstract
    In order to simulate magnetoresistive devices a set of simple models have been defined which allow the calculation of the resistance as a function of magnetic field for a given device geometry. The physical parameters of the model can be entered in a SPICE model statement. This model statement is then translated to an equivalent circuit using a SPICE pre-processor. The model of the MR element consists of a linear resistor and a nonlinear voltage controlled voltage source. In order to simulate the effect of applied magnetic fields, a voltage across a dummy resistor is used to represent the applied field. Track capacitance and inductance are also included in the model
  • Keywords
    magnetoresistive devices; AMR effect; GMR effect; MR element model; SPICE model statement; device geometry; equivalent circuit; linear resistor; magnetic field; magnetoresistive microsensors; nonlinear VCVS; nonlinear voltage controlled voltage source; physical parameters; track capacitance; track inductance;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Microengineering, Modelling and Design (Ref. No. 1999/052), IEE Seminar on
  • Conference_Location
    London
  • Type

    conf

  • DOI
    10.1049/ic:19990278
  • Filename
    773164