UNI-MOS: a unified SPICE built-in MOSFET model for circuit simulation and lifetime evaluation

Author

Chung, Steve S. ; Lee, J.-S. ; Chen, Y.G. ; Hsu, P.-C.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

1990

fDate

17-21 Sep 1990

Abstract

A lightly doped drain (LDD) MOS device model for circuit simulation in SPICE is described. UNI-MOS includes a consistent set of DC (I-V), AC (C-V), and hot electron degradation effect models. For the I-V and C- V models, results for achieving accurate and computationally efficient models of both conventional and LDD MOSFETs with submicron channel length are described. Strategies for implementing the hot electron effect in the circuit simulator for predicting the lifetime of a device or circuit in a VLSI environment are demonstrated

Keywords

circuit analysis computing; hot carriers; insulated gate field effect transistors; semiconductor device models; C-V models; I-V models; LDD MOSFETs; MOS device model; UNI-MOS; VLSI environment; built-in MOSFET model; circuit simulation; computationally efficient models; device lifetime estimation; hot electron degradation effect models; hot electron effect; lifetime evaluation; submicron channel length; unified SPICE model; Capacitance-voltage characteristics; Circuit simulation; Degradation; Electrons; Geometry; MOS devices; MOSFET circuits; Predictive models; SPICE; Solid modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC Seminar and Exhibit, 1990. Proceedings., Third Annual IEEE

Conference_Location

Rochester, NY

Type

conf

DOI

10.1109/ASIC.1990.186122

Filename

186122