• DocumentCode
    2901682
  • Title

    Ultra-thin compound semiconductor on insulator (XOI) for MOSFETs and TFETs

  • Author

    Kapadia, Rehan ; Takei, Kuniharu ; Ford, Alexandra C. ; Fang, Hui ; Chuang, Steven ; Madsen, Morten ; Krishna, Sanjay ; Javey, Ali

  • fYear
    2011
  • fDate
    20-22 June 2011
  • Firstpage
    13
  • Lastpage
    16
  • Abstract
    Due to their high electron mobility, III-V semiconductors are promising channel materials for future devices. InAs is one such promising material; however, due to the small bandgap (Eg~0.36 eV) bulk devices are not feasible. In addition, heteroepitaxial growth of thin layers on Si is challenging due to the inherent lattice mismatch. Here, we present a platform developed for integration of single-crystalline ultra-thin compound semiconductor layers on insulator (XOI), resembling the conventional SOI substrates.
  • Keywords
    MOSFET; electron mobility; silicon-on-insulator; MOSFET; SOI substrates; TFET; ultra-thin compound semiconductor on insulator; Epitaxial growth; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2011 69th Annual
  • Conference_Location
    Santa Barbara, CA
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-61284-243-1
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2011.5994400
  • Filename
    5994400
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2901682