Effect of oxide thickness scaling on self-heating in graphene transistors

To summarize, we have studied the effects of self-heating on graphene-on-insulator transistors. Physically, we find that ambipolar and unipolar operation lead to different scaling of peak channel temperature. For realistic devices, although the current degradation can be kept <;10% by careful choice of oxide thickness (~80 nm), sharply peaked temperatures can nevertheless have an impact on long-term device reliability and must be carefully considered in future device designs.