Reliability of ambipolar switching poly-Si diodes for cross-point memory applications

The ambipolar switching diodes with poly-Si n/p/n were successfully demonstrated for cross-point memory applications, such as RRAM. The high J_ON ~ 0.1 MA/cm² was obtained to provide memory programming for area = 2.25 x 10^-8 cm². Both negative and positive biases made the positive shift of the J-V curve with DC stress 100 sec and were contributed by acceptor-like defect formation. However, the reliability is sufficient for >;10⁶ cycles of 100 ns operation (~0.1 s total stress at 4V). V_BD of 2.25 x 10^-8 cm was estimated >; 1V for 10 years. Finally, the authors are very grateful for the support and funding provided by the National Science Council (NSC 98-2221-E-003-020-MY3), for carrying out the process by National Nano Device Laboratories (NDL).