• DocumentCode
    2902372
  • Title

    “Zero” drain-current drift of inversion-mode NMOSFET on InP (111)A surface

  • Author

    Wang, Chen ; Xu, Min ; Colby, Robert ; Stach, Eric A. ; Ye, Peide D.

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
  • fYear
    2011
  • fDate
    20-22 June 2011
  • Firstpage
    93
  • Lastpage
    94
  • Abstract
    In this paper, we report on "zero" drain-current drift on InP (111)A MOSFETs which is a major issue to prevent commercializing InP MOSFET technology on (100) surface in 1980s.
  • Keywords
    III-V semiconductors; MOSFET; indium compounds; interface states; semiconductor-insulator boundaries; Fermi level; InP; MOSCAP; charge-neutrality-level; crystalline surfaces; high-k dielectric; interfacial chemistry; inversion-mode NMOSFET; quantum well transistor; zero drain-current drift; MOSFET circuits; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2011 69th Annual
  • Conference_Location
    Santa Barbara, CA
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-61284-243-1
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2011.5994430
  • Filename
    5994430
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2902372