Title :
Investigation of clusters of layered semiconductors prepared by laser ablation
Author :
Galak, M. ; Yeschenko, O. ; Dmitruk, I. ; Romanyuk, V. ; Kasuya, A.
Author_Institution :
Dept. of Phys., Nat. Taras Shevchenko Univ. of Kyiv
Abstract :
The aim of the research presented is to investigate cluster formation under pulsed laser ablation of layered semiconductors. Rapid evaporation of material provoked by high intensity laser beam creates favorable conditions for cluster formation. Films consisting of HgI2 and PbI2 nanoparticles (NP) have been prepared by pulsed N2 laser ablation. Photoetching technique was used to decrease number of large particles. There is a good agreement of theoretical prediction and observed peaks in mass spectra
Keywords :
etching; laser ablation; laser beams; lead compounds; mass spectra; mercury compounds; nanoparticles; nitrogen; HgI2; N2; PbI2; cluster formation; high intensity laser beam; laser ablation; layered semiconductor; mass spectra; nanoparticle; photoetching technique; rapid evaporation; Atomic measurements; Composite materials; Laser ablation; Laser beams; Nanoparticles; Optical materials; Optical pulses; Semiconductor lasers; Semiconductor materials; Stability;
Conference_Titel :
Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on
Conference_Location :
Munich
Print_ISBN :
0-7803-8974-3
DOI :
10.1109/CLEOE.2005.1568390
