DocumentCode :
2903494
Title :
Delta-IDDQ Testing of Resistive Short Defects
Author :
Engelke, Piet ; Polian, Ilia ; Manhaeve, Hans ; Renovell, Michel ; Becker, Bernd
Author_Institution :
Albert-Ludwigs Univ., Freiburg
fYear :
2006
fDate :
Nov. 2006
Firstpage :
63
Lastpage :
68
Abstract :
This paper addresses the efficiency of IDDQ and more specifically Delta- IDDQ testing when using a realistic short defect model that properly considers the relation between the resistance of the short and its detectability. The results clearly show that the Delta-IDDQ approach covers a large number of resistive shorts missed by conventional logic testing, requiring only a relatively small vector set. In addition a significant number of defects which are proven to be undetectable by logic testing but may deteriorate and result in reliability failures are detected. The Delta- IDDQ threshold and thus the equipment sensitivity is shown to be critical for the test quality. Furthermore, the validity of the traditional IDDQ fault models when considering resistive short defects is found to be limited. For instance, the use of the fault-free next-state function for sequential IDDQ fault simulation is shown to result in a wrong classification of some resistive short defects. This is the first systematic study of IDDQ testing of resistive short defects. The impact of the threshold on the defect coverage is quantified for the first time. Although the simulation results are based upon a 0.35mum technology, the results and methodology can be transferred to state-of-the-art and NanoTechnologies
Keywords :
electric resistance; fault simulation; integrated circuit testing; logic testing; 0.35 micron; Delta-IDDQ testing; equipment sensitivity; fault simulation; logic testing; nanotechnologies; reliability failures; resistance; resistive defects; short defect model; test quality; CMOS technology; Circuit faults; Circuit simulation; Circuit testing; Current measurement; Electrical capacitance tomography; Leakage current; Logic testing; System testing; Transistors; Delta-IDDQ; Early-life failures; IDDQ testing; Resistive defects;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Test Symposium, 2006. ATS '06. 15th Asian
Conference_Location :
Fukuoka
ISSN :
1081-7735
Print_ISBN :
0-7695-2628-4
Type :
conf
DOI :
10.1109/ATS.2006.260994
Filename :
4030742
Link To Document :
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