Title :
Radiation effects in SiGe p-MODFETs grown on Silicon-on-Sapphire substrates
Author :
Madan, Anuj ; Mo, Jiong Jiong ; Arora, Rajan ; Phillips, Stanley D. ; Cressler, John D. ; Marshall, Paul W. ; Schrimpf, Ronald D. ; Koester, Steven J.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
The radiation response of strained SiGe p-MODFETs to 63 MeV protons is investigated for the first time. It is observed that both the drain current and the transconductance of the devices improve (increase) marginally following proton exposure. Low-frequency noise measurements were made both before and after irradiation to better understand the role of traps, and also improves following exposure. Localized strain in high Ge content SiGe layers of the device may affect the trap density after irradiation.
Keywords :
Ge-Si alloys; high electron mobility transistors; proton effects; Si-Al2O3; SiGe; drain current; electron volt energy 63 MeV; irradiation; low-frequency noise measurement; pMODFET; proton exposure; radiation effect; silicon-on-sapphire substrate; transconductance; trap density; HEMTs; Logic gates; MODFETs; Noise; Protons; Radiation effects; Silicon germanium; MODFET; SOS; SiGe; radiation effects;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-0492-5
Electronic_ISBN :
0379-6566
DOI :
10.1109/RADECS.2009.5994547
