Efficient single event upset simulations of a tolerant PD SOI CMOS D Flip-Flop

A simple way for modeling the single event upset (SEU) in Partially Depleted (PD) SOI CMOS circuits by Spice simulations is presented. A Verilog-A module connected to the body contact of PD SOI MOSFET is implemented to describe the transient current generated by an ion-track crossing the transistor. Verilog-A module is given by a physical based compact model and hence accounts for all variations in MOSFET´s physical parameters (i.e. mobility, lifetime, etc.) caused by irradiation, temperature, bias conditions, etc. Good agreement with mixed-mode numerical simulations is observed at different conditions. Both kinds of simulations show that PD SOI CMOS D Flip-Flop is tolerant to high LET energies, whereas bias supply reduction as well as an increase in the clock frequency of the flip-flop can degrade this tolerance.