Analyze of current components in NMOS single event transient

Author

Zheng, Liu ; Shuming, Chen ; Bin, Liang ; Biwei, Liu ; Zhenyu, Zhao

Author_Institution

Coll. of Comput., Nat. Univ. of Defense Technol., Changsha, China

fYear

2009

fDate

14-18 Sept. 2009

Firstpage

243

Lastpage

246

Abstract

3D mixed-mode simulation is used to research current components of SET current pulse in inverter chain, compared with that in a single NMOS. It is found that parasitic bipolar conduction current is the major component in SET current of single NMOS, but not in deep-submicron CMOS circuit. The paper provides a detailed discussion of source current in SET and it shows that negative and positive components of source current are related to bipolar amplification and diffusion of carriers respectively.

Keywords

CMOS integrated circuits; MOSFET; circuit simulation; invertors; technology CAD (electronics); 3D mixed-mode simulation; NMOS single event transient; SET current pulse; bipolar amplification; parasitic bipolar conduction current; source current; Integrated circuit modeling; Inverters; MOS devices; Semiconductor device modeling; Semiconductor process modeling; Solid modeling; Substrates; SET current pulse; diffusion current; mixed-mode TCAD simulation; parasitic bipolar conduction; plateau current;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on

Conference_Location

Bruges

ISSN

0379-6566

Print_ISBN

978-1-4577-0492-5

Electronic_ISBN

0379-6566

Type

conf

DOI

10.1109/RADECS.2009.5994587

Filename

5994587